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부품번호 | HFP8N65U 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
HFP8N65U
650V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 22.0 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
March 2013
BVDSS = 650 V
RDS(on) typ ȍ
ID = 7.5 A
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
7.5
4.7
30
ρ30
280
7.5
15.0
4.5
PD
Power Dissipation (TC = 25)
- Derate above 25
150
1.2
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
0.82
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͣ͝;ΒΣΔΙ͑ͣͤ͑͢͡
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
Note :
1. VGS = 0 V
2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
100 Ps
101 1 ms
10 ms
100 ms
100 DC
10-1
10-2100
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. ID = 3.75 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
8
6
4
2
0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
150
100
D=0.5
10-1
0.2
0.1
0.05
* Notes :
1. ZTJC(t) = 0.82 oC/W Max.
2. Duty Factor, D=t1/t2
3.
T
JM
-
T
C
=
P
DM
*
ZTJC(t)
10-2
0.02
0.01
10-5
single pulse
PDM
10-4
10-3
10-2
t1
t2
10-1
100
t , Square Wave Pulse Duration [sec]
1
101
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͣ͝;ΒΣΔΙ͑ͣͤ͑͢͡
4페이지 Package Dimension
{vTYYWGOhPG
9.90±0.20
ij±0.20
4.50±0.20
1.30±0.20
1.27±0.20
1.52±0.20
2.54typ
2.54typ
2.40±0.20
0.80±0.20
0.50±0.20
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳͣ͝;ΒΣΔΙ͑ͣͤ͑͢͡
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
HFP8N65S | N-Channel MOSFET | SemiHow |
HFP8N65U | N-Channel MOSFET | SemiHow |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |