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Datasheet HFS8N70U-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
HFS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | HFS10N60S | N-Channel MOSFET HFS10N60S
Nov 2007
HFS10N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.67 ȍ ID = 9.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gat  SemiHow mosfet | | |
| 2 | HFS10N60U | N-Channel MOSFET HFS10N60U
HFS10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area SemiHow mosfet | | |
| 3 | HFS10N65S | N-Channel MOSFET HFS10N65S
March 2014
HFS10N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 9.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Ga SemiHow mosfet | | |
| 4 | HFS10N65U | N-Channel MOSFET HFS10N65U
HFS10N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area SemiHow mosfet | | |
| 5 | HFS10N80 | N-Channel MOSFET HFS10N80
Dec 2010
HFS10N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 0.92 ȍ ID = 9.4 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate SemiHow mosfet | | |
| 6 | HFS11N40 | 400V N-Channel MOSFET
HFS11N40
Dec 2005
BVDSS = 400 V
HFS11N40
400V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge SemiHow mosfet | | |
| 7 | HFS11N80Z | 800V N-Channel MOSFET HFP11N80Z_HFS11N80Z
Oct 2016
HFP11N80Z / HFS11N80Z
800V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant Built-in ESD Diode
Key SemiHow mosfet | |
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