ACE1512E Datasheet PDF - ACE Technology
| Part Number | ACE1512E | |
| Description | N-Channel MOSFET | |
| Manufacturers | ACE Technology | |
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There is a preview and ACE1512E download ( pdf file ) link at the bottom of this page. Total 6 Pages | ||
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ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They
offer operation over a wide gate drive range from 1.8V to 8V.
It is ESD protected.
Features
• VDS (V)=20V
• ID=6.5A (VGS=4.5V)
• RDS(ON)<21mΩ (VGS=4.5V)
• RDS(ON)<25mΩ (VGS=2.5V)
• RDS(ON)<33mΩ (VGS=1.8V)
• ESD Protected : 2000V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)*AC TA=25℃
TA=70℃
Drain Current (Pulsed)*B
Power Dissipation
TA=25℃
TA=70℃
Operating temperature / storage temperature
Symbol Ratings Unit
VDSS 20 V
VGSS ±8 V
6.5
ID
A
5.2
IDM 24 A
1
PD
W
0.64
TJ/TSTG -55~150 ℃
Packaging Type
TSOT-23-3
VER 1.1 1
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ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Packing Information
TSOT-23-3
SYMBOLS
A
A1
A2
B
C
D
E
E1
e
e1
L
L1
L2
R
Θ
Θ1
DIMENSIONS IN MILLIMETERS
MIN
NOM
MAX
0.935 0.95 1.10
0.01 0.10
0.85 0.90 0.925
0.30 0.40 0.50
0.10 0.15 0.25
2.70 2.90 3.10
2.60 2.80 3.00
1.40 1.60 1.80
0.95BSC
1.90BSC
0.30 0.40 0.60
0.60REF
0.25BSC
0.10
0° 4° 8°
7°NOM
VER 1.1 5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ACE1512E electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ACE1512E.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| ACE1512E | The function is N-Channel MOSFET. ACE Technology | |
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