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AUIRF7665S2TR 데이터시트 PDF




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기능 Power MOSFET ( Transistor )
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AUIRF7665S2TR 데이터시트, 핀배열, 회로
 
AUTOMOTIVE GRADE
AUIRF7665S2TR
Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 100W per Channel into 8with No Heatsink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
 Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
RG (typical)
Qg (typical)
100V
51m
62m
3.5
8.3nC
  
Applicable DirectFET® Outline and Substrate Outline
SB DirectFET® ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7665S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging platform to
produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET® package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize
thermal transfer in automotive power systems.
This HEXFET® Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET® packaging platform offers low parasitic inductance and
resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that
accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Base Part Number  
AUIRF7665S2
Package Type  
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number  
AUIRF7665S2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
100
±20
14.4
10.2
4.1
77
58
30
2.4
37
56
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C  
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-10-5




AUIRF7665S2TR pdf, 반도체, 판매, 대치품
 
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
0.1
0.01
0.001
0.1
5.0V
60µs PULSE WIDTH
Tj = 25°C
1 10
V DS, Drain-to-Source Voltage (V)
100
Fig. 1 Typical Output Characteristics
140
ID = 8.9A
120
100
T J = 125°C
80
60 T J = 25°C
40
6
7 8 9 10 11 12 13 14 15
VGS, Gate -to -Source Voltage (V)
Fig. 3 Typical On-Resistance vs. Gate Voltage
100
10
1
0.1
0.01
2
TJ = -40°C
TJ = 25°C
TJ = 175°C
VDS = 25V
60µs PULSE WIDTH
4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 5. Transfer Characteristics
4
AUIRF7665S2TR
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.1
0.1
5.0V
60µs PULSE WIDTH
Tj = 175°C
1 10
V DS, Drain-to-Source Voltage (V)
100
Fig. 2 Typical Output Characteristics
320
Vgs = 10V
280
240
200
160 TJ = 125°C
120
TJ = 25°C
80
40
0
10 20 30
ID, Drain Current (A)
40
Fig. 4 Typical On-Resistance vs. Drain Current
2.5
ID = 8.9A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
2015-10-5

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AUIRF7665S2TR 전자부품, 판매, 대치품
  AUIRF7665S2TR
40
35
30
25
20
15
10
5
0
25
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 8.9A
50 75 100 125 150 175
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 15)
Starting T J , Junction Temperature (°C)
Fig 17. Maximum Avalanche Energy vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 18a. Unclamped Inductive Test Circuit
Fig 18b. Unclamped Inductive Waveforms
VDD 
Fig 19a. Gate Charge Test Circuit
Fig 19b. Gate Charge Waveform
Fig 20a. Switching Time Test Circuit
7
Fig 20b. Switching Time Waveforms
2015-10-5

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