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PDF AUIRF7675M2TR Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7675M2TR | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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AUTOMOTIVE GRADE
AUIRF7675M2TR
Advanced Process Technology
Optimized for Class D Audio Amplifier Applications
Low Rds(on) for Improved Efficiency
Low Qg for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Low Parasitic Inductance for Reduced Ringing and Lower EMI
Delivers up to 250W per Channel into 4 with No Heat sink
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and Reliability
Lead free, RoHS and Halogen free
Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
Rg (typical)
Qg (typical)
150V
47m
56m
1.2
21nC
DG
S
S
D
Applicable DirectFET® Outline and Substrate Outline
M2 DirectFET® ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging
platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal
transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance and
resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that
accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Base Part Number
AUIRF7675M2
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
AUIRF7675M2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (Tested)
IAR
EAR
TP
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
150
±20
18
13
4.4
90
72
45
2.7
59
170
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
V
A
W
mJ
A
mJ
°C
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-12-14
1 page  
5.5
4.5
3.5 ID = 100µA
ID = 250µA
ID = 1.0mA
2.5 ID = 1.0A
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
50
40 TJ = 25°C
30 TJ = 175°C
20
10
0
0
VDS = 10V
380µs PULSE WIDTH
4 8 12 16 20
ID,Drain-to-Source Current (A)
24
Fig 9. Typical Forward Trans conductance vs. Drain Current
14
ID= 11A
12
10
VDS= 120V
VDS= 75V
VDS= 30V
8
6
4
2
0
0 4 8 12 16 20 24
QG, Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
28
5
100
TJ = -40°C
TJ = 25°C
TJ = 175°C
10
AUIRF7675M2TR
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
100
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
20
16
12
8
4
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
2015-12-14
5 Page 
AUIRF7675M2TR
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
DFET2 Medium Can
MSL1, 260°C
Class M4 (+/- 400V)†
AEC-Q101-002
Class H1B (+/- 1000V)†
AEC-Q101-001
Class C4 (+/- 1000V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
12/14/2015
Updated datasheet with corporate template
Corrected ordering table on page 1.
Updated Tape and Reel option on page 10
Comments
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
11 2015-12-14
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7675M2TR.PDF ] | |
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