|
|
PDF AUIRF7759L2TR Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7759L2TR | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AUIRF7759L2TR (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
AUTOMOTIVE GRADE
PD - 96426
AUIRF7759L2TR
• Advanced Process Technology
• Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
• Exceptionally Small Footprint and Low Profile
• High Power Density
• Low Parasitic Parameters
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and
Reliability
• Lead Free, RoHS Compliant and Halogen Free
• Automotive Qualified *
AUIRF7759L2TR1
Automotive DirectFET® Power MOSFET
V(BR)DSS
75V
RDS(on) typ.
1.8mΩ
max.
2.3mΩ
ID (Silicon Limited)
160A
Qg 200nC
SS
SS
D GS
S
D
S
S
Applicable DirectFET® Outline and Substrate Outline
SB SC
M2 M4
L 8 DirectFET®ISOMETRIC
L4 L6 L8
Description
The AUIRF7759L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET®
packaging platform coupled with the latest silicon technology allows the AUIRF7759L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
EAS
IAR
EAR
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Package Limited)
gPulsed Drain Current
fPower Dissipation
fPower Dissipation
Power Dissipation
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
gRepetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Parameter
Junction-to-PCB Mounted
fLinear Derating Factor
Max.
75
±20
160
113
26
375
640
125
63
3.3
257
See Fig.18a, 18b, 16, 17
270
-55 to + 175
Typ.
Max.
––– 45
12.5 –––
20 –––
––– 1.2
––– 0.5
0.83
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
03/28/12
1 page  
4.5
4.0
3.5
3.0
2.5
2.0
1.5 ID = 1.0A
ID = 1.0mA
1.0 ID = 250μA
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs.
Junction Temperature
600
500
TJ = 25°C
400
AUIRF7759L2TR/TR1
1000
100
TJ = 175°C
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
300
TJ = 175°C
200
100 VDS = 25V
20μs PULSE WIDTH
0
0 50 100 150 200 250 300
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance vs. Drain Current
1000
Coss
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
14
ID= 96A
12
10
8
VDS= 60V
VDS= 38V
VDS= 15V
200
160
120
6 80
4
40
2
0
0 50 100 150 200 250 300
QG, Total Gate Charge (nC)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
5
5 Page 
AUIRF7759L2TR/TR1
Ordering Information
Base part number Package Type
AUIRF7759L2 DirectFET2 Large Can
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
1000
Complete Part Number
AUIRF7759L2TR
AUIRF7759L2TR1
www.irf.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRF7759L2TR.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AUIRF7759L2TR | Power MOSFET ( Transistor ) |  Infineon |
| AUIRF7759L2TR | Power MOSFET ( Transistor ) | International Rectifier |
| AUIRF7759L2TR1 | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |