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부품번호 | AP6680AGM-HF 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP6680AGM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
Description
AP6680A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
D
S
BVDSS
RDS(ON)
ID
D
D
D
D
SO-8
30V
11mΩ
12A
G
S
S
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
30 V
+20 V
12 A
9.8 A
60 A
2.5 W
Linear Derating Factor
0.02
W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
℃/W
1
201408256
AP6680AGM-HF
10
I D = 12 A
8
V DS =15V
6
4
2
0
0 4 8 12 16 20 24
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
f=1.0MHz
1200
1000
C800
iss
600
400
C200 oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
100us
1ms
1 10ms
100ms
0.1 1s
T A =25 o C
Single Pulse
DC
0.01
0.01 0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
. 0.02
0.01
0.01 Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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부품번호 | 상세설명 및 기능 | 제조사 |
AP6680AGM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |