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PDF HAT2057RA Data sheet ( Hoja de datos )

Número de pieza HAT2057RA
Descripción Silicon N Channel Power MOS FET
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HAT2057RA
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-1636 (Z)
1st. Edition
Feb. 2003
Features
Low on-resistance
Capable of 1.5 V gate drive
Low drive current
High density mounting
Outline
SOP-8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain

1 page




HAT2057RA pdf
HAT2057RA
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor Hitachi Europe Ltd.
Hitachi Asia Ltd.
Hitachi Asia (Hong Kong) Ltd.
(America) Inc.
Electronic Components Group
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Tel: <44> (1628) 585000
URL : http://semiconductor.hitachi.com.sg Tel : <852>-2735-9218
Fax: <44> (1628) 778322
Fax : <852>-2730-0281
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
(Taipei Branch Office)
URL : http://semiconductor.hitachi.com.hk
Dornacher Str 3
D-85622 Feldkirchen
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Postfach 201, D-85619 Feldkirchen Taipei (105), Taiwan
Germany
Tel : <886>-(2)-2718-3666
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://semiconductor.hitachi.com.tw
Copyright © Hitachi, Ltd., 2003. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.0, Feb. 2003, page 5 of 5

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