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PDF TSI20H120CW Data sheet ( Hoja de datos )
| Número de pieza | TSI20H120CW | |
| Descripción | Trench Schottky Rectifier | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TSI20H100CW - TSI20H200CW
Taiwan Semiconductor
20A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1
23
I2PAK
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case: I2PAK
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
SYMBOL
VRRM
IF(AV)
TSI20H
100CW
100
TSI20H
TSI20H
120CW
150CW
120 150
20
10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
150
Voltage rate of change (Rated VR)
Instantaneous forward voltage per diode
( Note1 )
IF = 5A
IF = 10A
IF = 5A
IF = 10A
Instantaneous reverse current per diode at rated
reverse voltage
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
dV/dt
VF
IR
RθJC
RθJL
TJ
TSTG
10000
TYP MAX TYP MAX TYP MAX
0.57 - 0.62 - 0.72 -
0.67 0.79 0.78 0.87 0.81 0.90
0.50 - 0.53 - 0.58 -
0.59 0.68 0.63 0.72 0.66 0.75
- 200 - 200 - 100
8 25 8 25 3 15
2.8
3.8
- 55 to +150
- 55 to +150
TSI20H
200CW
200
TYP
0.77
0.83
0.62
0.68
-
3
MAX
-
0.93
-
0.78
100
15
UNIT
V
A
A
V/μs
V
μA
mA
°C/W
°C/W
°C
°C
Document Number: DS_D1411038
Version: C15
1 page  
CREAT BY ART
TSI20H100CW - TSI20H200CW
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no
responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual
property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC
assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including
liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other
intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling
these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from
such improper use or sale.
Document Number: DS_D1411038
Version: C15
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TSI20H120CW.PDF ] | |
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