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부품번호 | TSI30H200CW 기능 |
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기능 | Trench Schottky Rectifier | ||
제조업체 | Taiwan Semiconductor | ||
로고 | |||
전체 5 페이지수
TSI30H100CW - TSI30H200CW
Taiwan Semiconductor
30A, 100V - 200V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
1
23
I2PAK
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case: I2PAK
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" menas green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Weight: 1.6 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average
forward rectified current
per device
per diode
SYMBOL
VRRM
IF(AV)
TSI30H
100CW
100
TSI30H
TSI30H
120CW
150CW
120 150
30
15
TSI30H
200CW
200
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
200
Voltage rate of change (Rated VR)
dV/dt
10000
TYP MAX TYP MAX TYP MAX TYP MAX
Instantaneous forward
voltage per diode (Note1)
IF = 15A
TJ = 25°C
TJ = 125°C
VF
Instantaneous reverse current per
diode at rated reverse voltage
TJ = 25°C
TJ = 125°C
IR
Typical thermal resistance per diode
RθJC
Operating junction temperature range
TJ
Storage temperature range
TSTG
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
0.69 0.78 0.75 0.84 0.81 0.90 0.84 0.92
0.61 0.68 0.64 0.73 0.68 0.77 0.70 0.79
- 250 - 250 - 150 - 150
10 35 10 35 3 20 3 20
2.7
- 55 to +150
- 55 to +150
UNIT
V
A
A
V/μs
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1411045
Version: C15
PACKAGE OUTLINE DIMENSIONS
I2PAK
MARKING DIAGRAM
P/N
G
YWW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
TSI30H100CW - TSI30H200CW
Taiwan Semiconductor
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
Unit (mm)
Min Max
- 10.50
1.14 1.40
2.80 4.20
0.68 0.94
2.41 2.67
9.07 9.47
7.79 9.35
4.40 4.70
1.14 1.40
2.20 2.80
0.35 0.64
0.95 1.45
Unit (inch)
Min Max
- 0.413
0.045 0.055
0.110 0.165
0.027 0.037
0.095 0.105
0.357 0.373
0.307 0.368
0.173 0.185
0.045 0.055
0.087 0.110
0.014 0.025
0.037 0.057
Document Number: DS_D1411045
Version: C15
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ TSI30H200CW.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TSI30H200CW | Trench Schottky Rectifier | Taiwan Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |