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PDF TSN525M60 Data sheet ( Hoja de datos )

Número de pieza TSN525M60
Descripción Trench Schottky Rectifier
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! TSN525M60 Hoja de datos, Descripción, Manual

25A, 60V Trench Schottky Rectifier
TSN525M60
Taiwan Semiconductor
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ high efficiency
- High forward surge capability
- Ideal for automated placement
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 qualified
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
A
K
PDFN56
MECHANICAL DATA
Case: PDFN56
Molding compound meets UL 94 V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.096g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
Marking code
SYMBOL
TSN525M60
525M60
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
60
25
220
MIN TYP
Instantaneous forward voltage
(Note 1)
IF = 12.5A
IF = 25A
IF = 12.5A
IF = 25A
TJ = 25°C
TJ = 125°C
VF
-
-
-
-
0.48
0.57
0.40
0.53
Instantaneous reverse current at rated reverse voltage TJ = 25°C
TJ = 125°C
IR
-
-
-
-
Typical thermal resistance
RθJL
9
Operating junction temperature range
TJ - 55 to +150
Storage temperature range
TSTG
- 55 to +150
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
MAX
0.54
0.63
0.50
0.59
500
100
UNIT
V
A
A
V
μA
mA
°C/W
°C
°C
Document Number: DS_D0000066
Version: A15

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