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Número de pieza | TSP10H200S | |
Descripción | Trench Schottky Rectifier | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSP10H200S (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! TSP10H200S
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
- Ideal for automated placement
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
TO-277A (SMPC)
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 95mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
TSP10H200S
Marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Note 1)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
VRRM
IF(AV)
IFSM
10H200
200
10
180
MIN TYP
Maximum instantaneous forward voltage
per diode (Note 2)
IF = 5A
IF = 10A
IF = 5A
IF = 10A
TJ = 25°C
TJ = 125°C
VF
-
-
-
-
0.75
0.80
0.59
0.66
Maximum instantaneous reverse current per diode at TJ = 25°C
rated reverse voltage
TJ = 125°C
IR
-
-
5
3
Typical thermal resistance
RθJL
15
Operating temperature range
TJ - 55 to +150
Storage temperature range
TSTG
- 55 to +150
Note 1: Mounted on 30 mm x 30 mm 4 oz. pad PCB
Note 2: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
MAX
-
0.91
-
0.74
100
20
UNIT
V
A
A
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1411066
Version: C14
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet TSP10H200S.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSP10H200S | Trench Schottky Rectifier | Taiwan Semiconductor |
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