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부품번호 | TST20H200CW 기능 |
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기능 | Trench Schottky Rectifier | ||
제조업체 | Taiwan Semiconductor | ||
로고 | |||
전체 5 페이지수
TST20H100CW thru TST20H200CW
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average
forward rectified current
per device
per diode
SYMBOL
VRRM
IF(AV)
TST20H
100CW
100
TST20H TST20H
120CW
120
150CW
150
20
10
TST20H
200CW
200
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
Voltage rate of change (Rated VR)
dV/dt
Instantaneous forward
voltage per diode
(Note1)
IF = 5A
IF = 10A
IF = 5A
IF = 10A
TJ = 25°C
TJ = 125°C
VF
Instantaneous reverse current per
diode at rated reverse voltage
TJ = 25°C
TJ = 125°C
IR
Typical thermal resistance per diode
RθJC
Operating junction temperature range
TJ
Storage temperature range
TSTG
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
10000
TYP MAX TYP MAX TYP MAX TYP MAX
0.57 - 0.62 - 0.72 - 0.77 -
0.67 0.79 0.78 0.89 0.81 0.90 0.83 0.93
0.50 - 0.53 - 0.58 - 0.62 -
0.59 0.68 0.63 0.72 0.66 0.75 0.68 0.78
- 200 - 200 - 100 - 100
8 25 10 30 3 15 3 15
2.8
- 55 to +150
- 55 to +150
UNIT
V
A
A
V/μs
V
μA
mA
OC/W
OC
OC
Document Number: DS_D1411058
Version: E14
PACKAGE OUTLINE DIMENSIONS
TO-220AB
TST20H100CW thru TST20H200CW
Taiwan Semiconductor
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Unit (mm)
Min
-
2.54
2.80
0.68
3.54
14.60
13.19
2.41
4.42
1.14
5.84
2.20
0.35
0.95
Max
10.50
3.44
4.20
0.94
4.00
16.00
14.79
2.67
4.76
1.40
6.86
2.80
0.64
1.45
Unit (inch)
Min
-
0.100
0.110
0.027
0.139
0.575
0.519
0.095
0.174
0.045
0.230
0.087
0.014
0.037
Max
0.413
0.135
0.165
0.037
0.157
0.630
0.582
0.105
0.187
0.055
0.270
0.110
0.025
0.057
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1411058
Version: E14
4페이지 | |||
구 성 | 총 5 페이지수 | ||
다운로드 | [ TST20H200CW.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TST20H200CW | Trench Schottky Rectifier | Taiwan Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |