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Datasheet LSI1012N3T5G-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
LSI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | LSI1012LT1G | N-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD.
N-Channel 1.8-V (G-S) MOSFET
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications R  LRC mosfet | | |
| 2 | LSI1012N3T5G | N-Channel 1.8-V (G-S) MOSFET N-Channel 1.8-V (G-S) MOSFET
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Co LRC mosfet | | |
| 3 | LSI1012XT1G | N-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD.
N-Channel 1.8-V (G-S) MOSFET
LSI1012XT1G S-LSI1012XT1G
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automot LRC mosfet | | |
| 4 | LSI1013LT1G | P-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD.
P-Channel 1.8-V (G-S) MOSFET
LSI1013LT1G S-LSI1013LT1G
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 14 ns D S- Prefix for Automot LRC mosfet | | |
| 5 | LSI1013XT1G | P-Channel 1.8-V (G-S) MOSFET P-Channel 1.8-V (G-S) MOSFET
LESHAN RADIO COMPANY, LTD.
LSI1013XT1G S-LSI1013XT1G
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 14 ns D S- Prefix for Automoti LRC mosfet | | |
| 6 | LSI1032E | ISPLSI1032E DataSheet.in
ispLSI and pLSI 1032E
® ®
High-Density Programmable Logic Features
• HIGH DENSITY PROGRAMMABLE LOGIC — 6000 PLD Gates — 64 I/O Pins, Eight Dedicated Inputs — 192 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State Machines, Address Dec  Lattice Semiconductor data | | |
| 7 | LSI11240 | TOWER TYPE LED LAMPS LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
TOWER TYPE LED LAMPS
LSI11240
DATA SHEET
DOC. NO REV. DATE
: :
QW0905- LSI11240 A
: 01 - Mar - 2005
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LSI11240 Page 1/4
Package Dimensio  LIGITEK electronics led | |
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