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부품번호 | S-LSI1012N3T5G 기능 |
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기능 | N-Channel 1.8-V (G-S) MOSFET | ||
제조업체 | LRC | ||
로고 | |||
N-Channel 1.8-V (G-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Gate-Source ESD Protected: 2000 V
D High-Side Switching
D Low On-Resistance: 0.7 W
D Low Threshold: 0.8 V (typ)
D Fast Switching Speed: 10 ns
D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
ORDERING INFORMATION
Device
Marking
Shipping
LSI1012N3T5G
S-LSI1012N3T5G
A2
10000/Tape&Reel
LESHAN RADIO COMPANY, LTD.
LSI1012N3T5G
S-LSI1012N3T5G
3
21
SOT883
3 Drain
Gate 1
Source 2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (diode conduction)b
Maximum Power Dissipationb
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA = 25_C
TA = 85_C
TA = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
PD
R θJA
TJ, Tstg
ESD
20
"6
600 500
400 350
1000
275 250
250
500
−-55 to 150
2000
Unit
V
mA
mW
°C/W
_C
V
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board.
Rev .O 1/6
LESHAN RADIO COMPANY, LTD.
LSI1012N3T5G , S-LSI1012N3T5G
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
1000
5
On-Resistance vs. Gate-to-Source Voltage
TJ = 125_C
100
TJ = 25_C
10 TJ = −55_C
4
ID = 350 mA
3
ID = 200 mA
2
1
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD − Source-to-Drain Voltage (V)
0
0123456
VGS − Gate-to-Source Voltage (V)
Threshold Voltage Variance vs. Temperature
0.3
IGSS vs. Temperature
3.0
0.2
ID = 0.25 mA
0.1
2.5
2.0
−0.0
1.5
−0.1
−0.2
1.0
VGS = 4.5 V
0.5
−0.3
−50
−25
0 25 50 75
TJ − Temperature (_C)
100 125
0.0
−50
−25
0 25 50 75
TJ − Temperature (_C)
100 125
BVGSS vs. Temperature
7
6
5
4
3
2
1
0
−50
−25
0 25 50 75
T − Temperature (_C)
100 125
Rev .O 4/6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ S-LSI1012N3T5G.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
S-LSI1012N3T5G | N-Channel 1.8-V (G-S) MOSFET | LRC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |