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부품번호 | S-LSI1013XT1G 기능 |
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기능 | P-Channel 1.8-V (G-S) MOSFET | ||
제조업체 | LRC | ||
로고 | |||
P-Channel 1.8-V (G-S) MOSFET
LESHAN RADIO COMPANY, LTD.
LSI1013XT1G
S-LSI1013XT1G
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Gate-Source ESD Protected: 2000 V
D High-Side Switching
D Low On-Resistance: 1.2 W
D Low Threshold: 0.8 V (typ)
D Fast Switching Speed: 14 ns
D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
ORDERING INFORMATION
Device
Marking
Shipping
LSI1013XT1G
S-LSI1013XT1G
LSI1013XT3G
S-LSI1013XT3G
B
B
3000/Tape&Reel
10000/Tape&Reel
SC-89
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
3
B
12
B = Specific Device Code
M = Month Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (diode conduction)b
Maximum Power Dissipationb for SC-75
Maximum Power Dissipationb for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
ESD
-400
-300
-275
175
90
275
160
-20
"6
-350
-275
-1000
-250
150
80
250
140
−55 to 150
2000
Notes
d. Pulse width limited by maximum junction temperature.
e. Surface Mounted on FR4 Board.
Unit
V
mA
mW
_C
V
Rev .O 1/6
LESHAN RADIO COMPANY, LTD.
LSI1013XT1G , S-LSI1013XT1G
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED)
1000
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
5
TJ = 125_C
4
100
TJ = 25_C
10
TJ = –55_C
3
2
ID = 200 mA
1
ID = 350 mA
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD – Source-to-Drain Voltage (V)
Threshold Voltage Variance vs. Temperature
0.3
0
0
3.0
12345
VGS – Gate-to-Source Voltage (V)
IGSS vs. Temperature
6
0.2
0.1
–0.0
ID = 0.25 mA
2.5
2.0
1.5 VGS = 4.5 V
–0.1
1.0
–0.2
0.5
–0.3
–50 –25
0 25 50 75
TJ – Temperature (_C)
100 125
0.0
–50 –25
0 25 50 75
TJ – Temperature (_C)
100 125
BVGSS vs. Temperature
7
6
5
4
3
2
1
0
–50 –25
0 25 50 75
TJ – Temperature (_C)
100 125
Rev .O 4/6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ S-LSI1013XT1G.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
S-LSI1013XT1G | P-Channel 1.8-V (G-S) MOSFET | LRC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |