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부품번호 | V40DL45BP 기능 |
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기능 | Trench MOS Barrier Schottky Rectifier | ||
제조업체 | Vishay | ||
로고 | |||
전체 5 페이지수
www.vishay.com
V40DL45BP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.26 V at IF = 5 A
TMBS ® eSMP® Series
SMPD
K
1
2
Top View
Bottom View
V40DL45BP
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(DC)
40 A
VRRM
45 V
IFSM
VF at IF = 40 A (TA = 125 °C)
TOP max. (AC model)
240 A
0.53 V
150 °C
TJ max. (DC forward current)
200 °C
Package
SMPD
Diode variations
Single die
MECHANICAL DATA
Case: SMPD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum DC forward current (fig. 1)
Peak forward surge current 10 ms single half sine-wave superimposed on
rated load
VRRM
IF(DC) (1)
IFSM
Operating junction temperature range (AC model)
Junction temperature in DC forward current without reverse bias, t = 1 h
TOP
TJ (2)
Note
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test
V40DL45BP
45
40
240
-40 to +150
200
UNIT
V
A
A
°C
°C
Revision: 18-Mar-14
1 Document Number: 87789
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V40DL45BP
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMPD
5()
120
120
WR
WR
Mounting Pad Layout
0,1
5()
0,1
5()
Revision: 18-Mar-14
4 Document Number: 87789
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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부품번호 | 상세설명 및 기능 | 제조사 |
V40DL45BP | Trench MOS Barrier Schottky Rectifier | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |