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PDF IMT17 Data sheet ( Hoja de datos )
| Número de pieza | IMT17 | |
| Descripción | DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IMT17 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Features
• Epitaxial Planar Die Construction
• Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
IMT17
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.016 grams (approximate)
C1 B2 E2
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
E1 B1 C2
Device Schematic
Symbol
VCBO
VCEO
VEBO
IC
Value
-60
-50
-5.0
-500
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C /W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage (Note 3)
SMALL SIGNAL CHARACTERISTICS
Symbol Min Typ Max
V(BR)CBO
-60
—
—
V(BR)CEO
-50
—
—
V(BR)EBO
-5.0
—
—
ICBO
— — -0.1
IEBO
— — -0.1
hFE 120 — 390
VCE(SAT)
—
— -0.6
Unit Test Condition
V IC = -100μA
V IC = -1.0mA
V IE = -100μA
μA VCB = -30V
μA VEB = -4.0V
— VCE = -3.0V, IC = -100mA
V IC = -500mA, IB = -50mA
Gain Bandwidth Product
fT
— 200 —
MHz
VCE = -5V, IE = 20mA,
f = 100MHz
Output Capacitance
Cob — 7 —
pF VCB = -10V, IE = 0, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on page 4 or on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
IMT17
Document number: DS31202 Rev. 4 - 2
1 of 4
www.diodes.com
March 2009
© Diodes Incorporated
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| PDF Descargar | [ Datasheet IMT17.PDF ] | |
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