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PDF 1SS400SMFH Data sheet ( Hoja de datos )
| Número de pieza | 1SS400SMFH | |
| Descripción | Switching Diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Switching Diode
1SS400SMFH
lApplication
High frequency switching
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
Datasheet
AEC-Q101 Qualified
lLand size figure (Unit : mm)
0.8
lFeatures
1) Ultra small mold type. (EMD2)
2) High reliability
EMD2
lStructure
lConstruction
Silicon epitaxial
0.3±0.05
ROHM : EMD2
JEDEC : SOD-523
JEITA : SC-79
0.6±0.1
dot (year week factory)
lTaping specifications (Unit : mm)
cathode
anode
lAbsolute maximum ratings (Ta= 25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Forward voltage(repetitive peak)
VRM
VR
IFM
Average rectified forward current
Io
Surge current(t=1s)
Isurge
Junction temperature
Tj
Storage temperature
Tstg
Limits
90
80
225
100
500
150
-55 to +150
Unit
V
V
mA
mA
mA
°C
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol Min. Typ. Max. Unit
Conditions
VF - - 1.2 V IF=100mA
IR - - 0.1 mA VR=80V
Ct - - 3 pF VR=0.5V, f=1MHz
trr - - 4 ns VR=6V, IF=10mA,RL=100W
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/5
2013.02 - Rev.B
1 page  
1SS400SMFH
lElectrical characteristic curves
0.001
0.0009
0.0008
0.0007
0.0006
0.0005
0.0004
0.0003
0.0002
0.0001
0
0
DC
D = 1/2
Sin(θ=180)
10 20 30 40 50 60 70 80
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
Data Sheet
0.2
DC
0.15
D = 1/2
0.1
Sin(θ=180)
0.05
0A Io
0V
t D=t/T VR
T VR=40V
Tj=150°C
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
10
9
8
7 AVE : 9kV
6
5
4
3 AVE : 1.8kV
2
1
C=200pF
0 R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
5/5
2013.02 - Rev.B
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 1SS400SMFH.PDF ] | |
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