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PDF AP03N70I-H-HF Data sheet ( Hoja de datos )

Número de pieza AP03N70I-H-HF
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP03N70I-H-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP03N70I-H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Fast Switching Speed
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
D
S
Description
AP03N70 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
BVDSS
RDS(ON)
ID4
700V
4.4Ω
2.5A
G
DS
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
700 V
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
TSTG
TJ
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
+30
2.5
1.6
8
29
0.23
32
2.5
-55 to 150
-55 to 150
V
A
A
A
W
W/
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4.3
65
Units
/W
/W
1
201501076

1 page




AP03N70I-H-HF pdf
MARKING INFORMATION
AP03N70I-H-HF
H
03N70I
YWWSSS
Part Number
Option
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
.
5

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