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부품번호 | AP04N70BI-A-HF 기능 |
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기능 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
Advanced Power
Electronics Corp.
AP04N70BI-A-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
D
S
BVDSS
RDS(ON)
ID4
650V
2.4Ω
4A
Description
AP04N70B series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
G
DS
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
650
+30
4
2.5
15
33
0.26
8
4
-55 to 150
-55 to 150
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.8
65
Unit
℃/W
℃/W
1
201501085
AP04N70BI-A-HF
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
25 50 75 100 125 150
T c , Case Temperature ( o C )
Fig 5. Maximum Drain Current v.s.
Case Temperature
.
40
30
20
10
0
0 50 100 150
T c , Case Temperature ( o C )
Fig 6. Typical Power Dissipation
100
10
1
0.1
T c =25 o C
Single Pulse
0.01
1
10
100
V DS (V)
100us
1ms
10ms
100ms
1s
DC
1000
10000
1
DUTY=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
4페이지 MARKING INFORMATION
AP04N70BI-A-HF
A
04N70BI
YWWSSS
Part Number
Option
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
.
7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ AP04N70BI-A-HF.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
AP04N70BI-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |