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PDF AP04N70BI-HF Data sheet ( Hoja de datos )
| Número de pieza | AP04N70BI-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP04N70BI-HF (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Advanced Power
Electronics Corp.
AP04N70BI-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP04N70B series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
BVDSS
RDS(ON)
ID4
600V
2.4Ω
4A
G
DS
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
600
+30
4
2.5
15
33
0.26
8
4
-55 to 150
-55 to 150
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.8
65
Unit
℃/W
℃/W
1
201501084
1 page  
AP04N70BI-HF
16
I D =4A
12 V DS =320V
V DS =400V
V DS =480V
8
4
0
0 5 10 15 20 25
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1 6 11 16 21 26 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
T j = 25 o C
1
0.1
0
0.2 0.4 0.6 0.8
1
V SD (V)
1.2 1.4 1.6
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50 0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AP04N70BI-HF.PDF ] | |
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