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PDF MMBT3904FW Data sheet ( Hoja de datos )
| Número de pieza | MMBT3904FW | |
| Descripción | NPN Silicon General Purpose Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
MMBT3904FW
NPN Silicon
General Purpose Transistor
FEATURES
· Epitaxial Planar Die Construction
· Complementary PNP Type Available
(MMBT3906FW)
· Ideal for Medium Power Amplification and
Switching
COLLECTOR
3
3
RoHS Compliant Product
A
L
Top View
BS
VG
1
BASE
2
EMITTER
1
2
SOT-523
D
MAXIMUM RATINGS
Rating
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient(1)
Total Device Dissipation(2)
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient(2)
Junction and Storage Temperature
DEVICE MARKING
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
MMBT3904FW = 1N, AM
C
H
K
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
Max
200
1.6
600
300
2.4
400
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT-523
Dim Min Max
A 1.500 1.700
B 0.750 0.850
C 0.700 0.900
D 0.250 0.350
G 0.900 1.100
H 0.000 0.100
J 0.100 0.200
K 0.220 0.500
J
L 0.400 0.600
S 1.500 1.700
V 0.200 0.400
All Dimension in mm
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
1. FR– 4 = Minimum Pad
2. Alumina = 1.0 1.0 Inch Pad.
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
40
60
6.0
—
—
Max Unit
— Vdc
— Vdc
— Vdc
50 nAdc
50 nAdc
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 6
1 page  
Elektronische Bauelemente
MMBT3904FW
NPN Silicon
General Purpose Transistor
300
200
100
70
50
30
0.1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
50
20
10
5
0.2 0.3 0.5 1.0 2.0 3.0
I C, Collector Current (mA)
Figure 11. Current Gain
5.0
10
2
1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
IC, Collector Current (mA)
Figure 12. Output Admittance
10
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.2 0.3 0.5 1.0 2.0 3.0
IC, Collector Current (mA)
5.0
Figure 13. Input Impedance
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0
I C, Collector Current (mA)
5.0
Figure 14. Voltage Feedback Ratio
10
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
1.0 +25°C
0.7
0.5 – 55°C
0.3
0.2
VCE = 1.0 V
0.1
0.1
0.2 0.3
0.5 0.7 1.0
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
2.0 3.0
5.0 7.0 10
IC, Collector Current (mA)
Figure 15. DC Current Gain
20 30
50 70 100
200
Any changing of specification will not be informed individual
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBT3904FW.PDF ] | |
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