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부품번호 | CGH35240F 기능 |
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기능 | GaN HEMT | ||
제조업체 | Cree | ||
로고 | |||
전체 12 페이지수
CGH35240F
240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3454204200F1
Typical Performance Over 3.1-3.5GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
3.1 GHz
3.2 GHz
3.3 GHz
3.4 GHz
Output Power
250 240 225 225
3.5 GHz
220
Gain
12.1
11.9
11.6
11.5
11.4
Power Added Efficiency
60
59
57
52
Note:
Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, PIN = 42 dBm.
48
Units
W
dB
%
Features
• 3.1 - 3.5 GHz Operation
• 240 W Typical Output Power
• 11.6 dB Power Gain at PIN = 42.0 dBm
• 57 % Typical Power Added Efficiency
• 50 Ohm Internally Matched
• <0.2 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/wireless
1
Typical Performance
CGH35240 Output Power vs Input Power
VDS = 28 V, IDS = 1 A, Pulse PWoiudttvhs=P3in00 μS, Duty Cycle = 20 %
60
55 3.1 GHz
3.2 GHz
3.3 GHz
50 3.4 GHz
3.5 GHz
45
40
35
30
25
20
15
70
60
20 25 30 35 40 45
Input Power (dBm)
CGH35240 PAE & Gain vs Input Power
VDS = 28 V, IDS = 1 A, Pulse WPidAtEhv=s 3P0in0 μS, Duty Cycle = 20 %
PAE - 3.1 GHz
Gain - 3.1 GHz
PAE - 3.2 GHz
Gain - 3.2 GHz
PAE - 3.3 GHz
Gain - 3.3 GHz
PAE - 3.4 GHz
Gain - 3.4 GHz
PAE - 3.5 GHz
Gain - 3.5 GHz
18
16
50 14
40 12
30 10
20 8
10 6
0
15 20 25 30 35 40 45
Input Power (dBm)
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4 CGH35240F Rev 3.0
4
50
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
4페이지 CGH35240F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
R1
R2
C1,C3
C2
C4,C11
C15
C5,C12
C13
C6
C9,C10
C16
J1,J2
J3
J4
W1
L1
-
Q1
Description
RES, 511 OHM, +/- 1%, 1/16W,0603
RES, 5.1,OHM, +/- 1%, 1/16W,0603
CAP, 10.0pF, +/-5%,250V, 0603,
CAP, 6.8pF, +/- 0.25 pF,250V, 0603
CAP, 470PF, +/-5%, 100V, 0603, X
CAP, 33 UF, 20%, G CASE
CAP,33000PF, 0805,100V, X7R
CAP, 1.0UF, 100V, 10%, X7R, 1210
CAP 10UF 16V TANTALUM
CAP, 10pF, +/- 1%, 250V, 0805
CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC
CONN, SMA, PANEL MOUNT JACK, FL
HEADER RT>PLZ .1CEN LK 9POS
CONNECTOR ; SMB, Straight, JACK,SMD
CABLE ,18 AWG, 4.2
FERRITE, 22 OHM, 0805, BLM21PG220SN1
PCB, RO4350, 2.5 X 4.0 X 0.030
CGH35240F
CGH35240F-AMP Demonstration Amplifier Circuit
Qty
1
1
2
1
2
1
2
1
1
2
1
2
1
1
1
1
1
1
Copyright © 2010-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7 CGH35240F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
7페이지 | |||
구 성 | 총 12 페이지수 | ||
다운로드 | [ CGH35240F.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CGH35240F | GaN HEMT | Cree |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |