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CGH55015P1 데이터시트 PDF




Cree에서 제조한 전자 부품 CGH55015P1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 CGH55015P1 기능
기능 GaN HEMT
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CGH55015P1 데이터시트, 핀배열, 회로
CGH55015F1 / CGH55015P1
15 W, 5500-5800 MHz, GaN HEMT for WiMAX
Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX
and linear amplifier applications. The transistor is available in both screw-down, flange
and solder-down, pill packages. Based on appropriate external match adjustment, the
CGH55015F1/CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well.
PPNa:cCkGagHe5T5y0p1e5:P4140&1C9G6H&554041051F616
Typical Performance 5.5-5.8GHz (TC = 25˚C)
Parameter
5.50 GHz
Small Signal Gain
10.7
5.65 GHz
11.0
5.80 GHz
10.7
EVM at PAVE = 23 dBm
1.9 1.8 2.0
EVM at PAVE = 33 dBm
1.5 1.5 1.7
Drain Efficiency at PAVE = 33 dBm
25
25
25
Input Return Loss
11.5
14.5
10.5
Note:
Measured in the CGH55015-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
%
%
%
dB
Features
• 5.5 - 5.8 GHz Operation
• 15 W Peak Power Capability
• >10.5 dB Small Signal Gain
• 2 W PAVE < 2.0 % EVM
• 25 % Efficiency at 2 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for Multi-carrier DOCSIS Applications
Subject to change without notice.
www.cree.com/wireless
1




CGH55015P1 pdf, 반도체, 판매, 대치품
Typical WiMAX Performance
Drain Efficiency and Gain vs Power Output measured in the CGH55015-AMP
VDD = 28 VG,aIiDnQ, =EV1M15anVmddADdr,=a8i2n082EVf.,f1iIcd6iqe-=2n1c01y05v4msOAOFuDtpMut,PPoAwRer= 9.8 dB
14 35
5.50 GHz (Gain)
5.65 GHz (Gain)
5.80 GHz (Gain)
5.50 GHz (Efficiency)
5.65 GHz (Efficiency)
5.80 GHz (Efficiency)
12 30
10 25
8 20
6 15
4 10
25
00
15 20 25 30 35
Power Output (dBm)
Typical EVM and Drain ETfyfipcicieanl EcVyMvsvsOOuutptpuuttPPoowweerr omf eCaGsHu5r5e0d15inF the CGH55015-AMP at
5.50 GHz, 5.65 GHz,55.5.08G0HGzH, 5z.,685G02H.z1, 65.-8200G0H4z OFDM, PAR=9.8 dB
14.0
35
5.50 GHz (EVM)
5.65 GHz (EVM)
5.80 GHz (EVM)
12.0
30
5.50 GHz (Efficiency)
5.65 GHz (Efficiency)
5.80 GHz (Efficiency)
10.0
25
8.0 20
6.0 15
4.0 10
2.0 5
0.0 0
15 20 25 30 35
Power Output (dBm)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4 CGH55015F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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CGH55015P1 전자부품, 판매, 대치품
Source and Load Impedances
Z Source
G
D
Z Load
S
Frequency (MHz)
5500
5650
5800
Z Source
8.7 – j30.2
10.2 – j26.9
12.3 – j24.3
Z Load
21.6 – j4.7
24.2 - j5.5
26.5 - j7.5
Note 1. VDD = 28V, IDQ = 115 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH55015-AMP demonstration amplifier
and are not source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A > 250 V
1 < 200 V
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7 CGH55015F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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