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부품번호 | CGH55030F1 기능 |
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기능 | GaN HEMT | ||
제조업체 | Cree | ||
로고 | |||
전체 13 페이지수
CGH55030F1 / CGH55030P1
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX
and BWA amplifier applications. The transistor is available in both screw-down, flange
and solder-down, pill packages. Based on appropriate external match adjustment, the
CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well.
PPNa: cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616
Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.50 GHz
5.65 GHz
Small Signal Gain
9.5 10.0
5.80 GHz
9.5
Units
dB
EVM at PAVE = 29 dBm
1.1 0.9 0.9 %
EVM at PAVE = 36 dBm
2.2 1.4 1.4 %
Drain Efficiency at PAVE = 4 W
23
24
25 %
Input Return Loss
10.8
22
9.3 dB
Note:
Measured in the CGH55030-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
• 300 MHz Instantaneous Bandwidth
• 30 W Peak Power Capability
• 10 dB Small Signal Gain
• 4 W PAVE < 2.0 % EVM
• 25 % Efficiency at 4 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for Multi-carrier DOCSIS Applications
Subject to change without notice.
www.cree.com/rf
1
Typical WiMAX Performance
Drain Efficiency and Gain vs Output Power of
CGH55030F1 and CGH55030P1 in CGH55030-AMP
VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB
14 35
12 30
10 25
8
5.50 GHz (Gain)
5.65 GHz (Gain)
6
5.80 GHz (Gain)
5.50 GHz (Efficiency)
4 5.65 GHz (Efficiency)
5.80 GHz (Efficiency)
2
20
15
10
5
00
15 20 25 30 35 40
Output Power (dBm)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Typical EVM and Drain Efficiency vs Output Power of
CGH55030F1 and CGH55030P1 in CGH55030-AMP at
5.50GHz, 5.65 GHz, 5.80GHz, 802.16-2004 OFDM, PAR=9.8 dB
14.0 35
12.0
10.0
8.0
5.50 GHz (EVM)
5.65 GHz (EVM)
5.80 GHz (EVM)
5.50 GHz (Efficiency)
5.65 GHz (Efficiency)
5.80 GHz (Efficiency)
30
25
20
6.0 15
4.0 10
2.0 5
0.0 0
15 20 25 30 35 40
Output Power (dBm)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4 CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
4페이지 Source and Load Impedances
Z Source
G
D
Z Load
S
Frequency (MHz)
5500
5650
5800
Z Source
8.0 – j12.4
8.7 - j13.1
8.4 - j14.0
Z Load
14.1 – j12.6
14.7 – j11.7
15.4 – j11.0
Note 1. VDD = 28V, IDQ = 250 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH55030-AMP demonstration amplifier
and are not source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7 CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ CGH55030F1.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CGH55030F1 | GaN HEMT | Cree |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |