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CGH55030F1 데이터시트 PDF




Cree에서 제조한 전자 부품 CGH55030F1은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 CGH55030F1 기능
기능 GaN HEMT
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CGH55030F1 데이터시트, 핀배열, 회로
CGH55030F1 / CGH55030P1
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX
and BWA amplifier applications. The transistor is available in both screw-down, flange
and solder-down, pill packages. Based on appropriate external match adjustment, the
CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well.
PPNa: cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616
Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.50 GHz
5.65 GHz
Small Signal Gain
9.5 10.0
5.80 GHz
9.5
Units
dB
EVM at PAVE = 29 dBm
1.1 0.9 0.9 %
EVM at PAVE = 36 dBm
2.2 1.4 1.4 %
Drain Efficiency at PAVE = 4 W
23
24
25 %
Input Return Loss
10.8
22
9.3 dB
Note:
Measured in the CGH55030-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
• 300 MHz Instantaneous Bandwidth
• 30 W Peak Power Capability
10 dB Small Signal Gain
• 4 W PAVE < 2.0 % EVM
• 25 % Efficiency at 4 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for Multi-carrier DOCSIS Applications
Subject to change without notice.
www.cree.com/rf
1




CGH55030F1 pdf, 반도체, 판매, 대치품
Typical WiMAX Performance
Drain Efficiency and Gain vs Output Power of
CGH55030F1 and CGH55030P1 in CGH55030-AMP
VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB
14 35
12 30
10 25
8
5.50 GHz (Gain)
5.65 GHz (Gain)
6
5.80 GHz (Gain)
5.50 GHz (Efficiency)
4 5.65 GHz (Efficiency)
5.80 GHz (Efficiency)
2
20
15
10
5
00
15 20 25 30 35 40
Output Power (dBm)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Typical EVM and Drain Efficiency vs Output Power of
CGH55030F1 and CGH55030P1 in CGH55030-AMP at
5.50GHz, 5.65 GHz, 5.80GHz, 802.16-2004 OFDM, PAR=9.8 dB
14.0 35
12.0
10.0
8.0
5.50 GHz (EVM)
5.65 GHz (EVM)
5.80 GHz (EVM)
5.50 GHz (Efficiency)
5.65 GHz (Efficiency)
5.80 GHz (Efficiency)
30
25
20
6.0 15
4.0 10
2.0 5
0.0 0
15 20 25 30 35 40
Output Power (dBm)
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4 CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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CGH55030F1 전자부품, 판매, 대치품
Source and Load Impedances
Z Source
G
D
Z Load
S
Frequency (MHz)
5500
5650
5800
Z Source
8.0 – j12.4
8.7 - j13.1
8.4 - j14.0
Z Load
14.1 – j12.6
14.7 – j11.7
15.4 – j11.0
Note 1. VDD = 28V, IDQ = 250 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH55030-AMP demonstration amplifier
and are not source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2008-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7 CGH55030F1_P1 Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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