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Número de pieza | CGHV1J006D | |
Descripción | GaN HEMT Die | |
Fabricantes | Cree | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CGHV1J006D (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CGHV1J006D
6 W, 18.0 GHz, GaN HEMT Die
Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm
gate length fabrication process. This GaN-on-SiC product offers superior high
frequency, high efficiency features. It is ideal for a variety of applications
operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J006D
FEATURES
• 17 dB Typ. Small Signal Gain at 10 GHz
• 60% Typ. PAE at 10 GHz
• 6 W Typical Psat
• 40 V Operation
• Up to 18GHz Operation
APPLICATIONS
• Satellite Communications
• PTP Communications Links
• Marine Radar
• Pleasure Craft Radar
• Port Vessel Traffic Services
• Broadband Amplifiers
• High Efficiency Amplifiers
Packaging Information
• Bare die are shipped in Gel-Pak® containers or on tape.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/rf
1
1 page Source and Load Impedances
Frequency
(GHz)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Source Impedance
(ohms)
33.5 + j43.4
14.8 + j19.9
8.92 + j13.2
7.28 + j9.64
6.25 + j7.2
5.4 + j5.2
4.9 + j3.54
4.67 + j2.39
4 + j1.21
3.56 + j0.155
3.2 – j0.226
1.7 – j0.35
1.68 – j1.27
1.73 – j2.18
1.99 – j3.04
2.41 – j3.89
1.72 – j4.84
2.1 – j5.71
Load Impedance
(ohms)
136.8 + j99
66.1 + j103.5
36.3 + j81.3
25 + j69.1
19.1 + j58
13.47 + j49.5
11 + j43.4
9.84 + j38.5
8.76 + j34.2
7.93 + j30.75
7.68 + j27.87
7.36 + j24.8
6.76 + j23
5.59 +j20.5
4.88 + j18.76
4.27 + j17.11
3.9 + j15.26
3.4 + j14
Series Gate Stability Resistor
(ohms)
28.0
13.0
7.80
5.40
3.90
2.80
2.05
1.60
1.10
0.73
0.40
0.15
0
0
0
0
0
0
Table 1.
Note: VDD = 40 V, IDQ = 45 mA.
Figure 3. CGHV1J006D - Power Gain, Output Power and Drain Efficiency using
Source and Load Pull Impedances (Series gate stability resistor values chosen to make K>1)
70
60
50
Power Gain, dB
40 Output Power, Watts
Drain Efficiency, %
30
20
10
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Copyright © 2011-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
5 CGHV1J006D Rev 0.6
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet CGHV1J006D.PDF ] |
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