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CGHV27060MP 데이터시트 PDF




Cree에서 제조한 전자 부품 CGHV27060MP은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 CGHV27060MP 자료 제공

부품번호 CGHV27060MP 기능
기능 GaN HEMT
제조업체 Cree
로고 Cree 로고


CGHV27060MP 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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CGHV27060MP 데이터시트, 핀배열, 회로
PRELIMINARY
CGHV27060MP
60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications
Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor
(HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a
broadband device with no internal input or output match which allows for the agility
to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP
makes for an excellent transistor for pulsed applications at UHF, L Band or low S
Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro basestation
amplifiers in the power class of 10 to 15W average power in high efficiency topologies
such as Class A/B, F or Doherty amplifiers.
PN: CGHV27060MP
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain @ 41.5 dBm Avg POUT
18.25
18.5
18.25
ACLR @ 41.5 dBm Avg POUT
-34 -37 -38
Drain Efficiency @ 41.5 dBm Avg POUT
33
35
33
Note:
Measured in the CGHV27060MP-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 125 mA.
Typical Performance Over 2.5 - 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain
16.5
16.3
16.2
Output Power
84 82 79
Drain Efficiency
71 69 65
Note:
Measured in the CGHV27060MP-TB amplifier circuit, under pulse width 100 μs, 10% duty cycle, PIN = 33 dBm.
Units
dB
dBc
%
Units
dB
W
%
Features - WCDMA
• 2.5 - 2.7 GHz Reference Design Amplifier
• 18.5 dB Gain at 14 W PAVE
• -35 dBc ACLR at 14 W PAVE
• 35% Efficiency at 14 W PAVE
High Degree of DPD Correction Can be Applied
Features - Pulsed
• 16.5 dB Gain at Pulsed PSAT
• 70% Efficiency at Pulsed PSAT
• 80W at Pulsed PSAT
Subject to change without notice.
www.cree.com/rf
1




CGHV27060MP pdf, 반도체, 판매, 대치품
CGHV27060MP Power Dissipation De-ratinPgoCwuerrvdeissipation derating curve vs. Max Tcase
Pulsed (100 uS/ 10% duty)
100
90
80
70
60
Note 1
50
40
30
20
Linear CW
10
Pulse 100uS / 10%
0
0
50 100 150 200
Case Temperature (C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
250
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Moisture Sensitivity Level (MSL) Classification
Parameter
Moisture Sensitivity Level
Symbol
MSL
Class
1A (> 250 V)
2 (125 V to 250 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Level
3 (168 hours)
Test Methodology
IPC/JEDEC J-STD-20
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4 CGHV27060MP Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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CGHV27060MP 전자부품, 판매, 대치품
Product Ordering Information
Order Number
Description
CGHV27060MP
GaN HEMT
Unit of Measure
Each
Image
CGHV27060MP-AMP1 Test board with GaN HEMT installed
Each
Copyright © 2015-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7 CGHV27060MP Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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부품번호상세설명 및 기능제조사
CGHV27060MP

GaN HEMT

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