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W9816G6IH 데이터시트 PDF




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부품번호 W9816G6IH 기능
기능 512K x 2-BANKS x 16-BITS SDRAM
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W9816G6IH 데이터시트, 핀배열, 회로
W9816G6IH
512K × 2 BANKS × 16 BITS SDRAM
Table of Contents-
1. GENERAL DESCRIPTION ......................................................................................................... 3
2. FEATURES ................................................................................................................................. 3
3. AVAILABLE PART NUMBER ..................................................................................................... 3
4. PIN CONFIGURATION ............................................................................................................... 4
5. PIN DESCRIPTION..................................................................................................................... 5
6. BLOCK DIAGRAM ...................................................................................................................... 6
7. FUNCTIONAL DESCRIPTION ................................................................................................... 7
7.1 Power Up and Initialization ............................................................................................. 7
7.2 Programming Mode Register.......................................................................................... 7
7.3 Bank Activate Command ................................................................................................ 7
7.4 Read and Write Access Modes ...................................................................................... 7
7.5 Burst Read Command .................................................................................................... 8
7.6 Burst Write Command .................................................................................................... 8
7.7 Read Interrupted by a Read ........................................................................................... 8
7.8 Read Interrupted by a Write............................................................................................ 8
7.9 Write Interrupted by a Write............................................................................................ 8
7.10 Write Interrupted by a Read............................................................................................ 8
7.11 Burst Stop Command ..................................................................................................... 9
7.12 Addressing Sequence of Sequential Mode .................................................................... 9
7.13 Addressing Sequence of Interleave Mode ..................................................................... 9
7.14 Auto-precharge Command ........................................................................................... 10
7.15 Precharge Command.................................................................................................... 10
7.16 Self Refresh Command ................................................................................................ 10
7.17 Power Down Mode ....................................................................................................... 11
7.18 No Operation Command............................................................................................... 11
7.19 Deselect Command ...................................................................................................... 11
7.20 Clock Suspend Mode.................................................................................................... 11
8. OPERATION MODE ................................................................................................................. 12
9. ELECTRICAL CHARACTERISTICS......................................................................................... 13
9.1 Absolute Maximum Ratings .......................................................................................... 13
9.2 Recommended DC Operating Conditions .................................................................... 13
Publication Release Date: Mar. 22, 2010
- 1 - Revision A02




W9816G6IH pdf, 반도체, 판매, 대치품
4. PIN CONFIGURATION
VCC
DQ0
DQ1
VSSQ
DQ2
DQ3
VCCQ
DQ4
DQ5
VSSQ
DQ6
DQ7
VCCQ
LDQM
WE
CAS
RAS
CS
BA
A10
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
W9816G6IH
50 VSS
49 DQ15
48 DQ14
47 VSSQ
46 DQ13
45 DQ12
44 VCCQ
43 DQ11
42 DQ10
41 VSSQ
40 DQ9
39 DQ8
38 VCCQ
37 NC
36 UDQM
35 CLK
34 CKE
33 NC
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 VSS
Publication Release Date: Mar. 22, 2010
- 4 - Revision A02

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W9816G6IH 전자부품, 판매, 대치품
W9816G6IH
7. FUNCTIONAL DESCRIPTION
7.1 Power Up and Initialization
The default power up state of the mode register is unspecified. The following power up and
initialization sequence need to be followed to guarantee the device being preconditioned to each user
specific needs during power up, all VCC and VCCQ pins must be ramp up simultaneously to the
specified voltage when the input signals are held in the "NOP" state. The power up voltage must not
exceed VCC + 0.3V on any of the input pins or VCC supplies. After power up, an initial pause of 200 µS
is required followed by a precharge of all banks using the precharge command. To prevent data
contention on the DQ bus during power up, it is required that the DQM and CKE pins be held high
during the initial pause period. Once all banks have been precharged, the Mode Register Set
Command must be issued to initialize the Mode Register. An additional eight Auto Refresh cycles
(CBR) are also required before or after programming the Mode Register to ensure proper subsequent
operation.
7.2 Programming Mode Register
After initial power up, the Mode Register Set Command must be issued for proper device operation.
All banks must be in a precharged state and CKE must be high at least one cycle before the Mode
Register Set Command can be issued. The Mode Register Set Command is activated by the low
signals of RAS , CAS , CS and WE at the positive edge of the clock. The address input data
during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A
new command may be issued following the mode register set command once a delay equal to tRSC
has elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table.
7.3 Bank Activate Command
The Bank Activate command must be applied before any Read or Write operation can be executed.
The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate
command is applied to when the first read or write operation can begin must not be less than the RAS
to CAS delay time (tRCD). Once a bank has been activated it must be precharged before another Bank
Activate command can be issued to the same bank. The minimum time interval between successive
Bank Activate commands to the same bank is determined by the RAS cycle time of the device (tRC).
The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice
versa) is the Bank-to-Bank delay time (tRRD). The maximum time that each bank can be held active is
specified as tRAS(max.).
7.4 Read and Write Access Modes
After a bank has been activated, a read or write cycle can be followed. This is accomplished by setting
RAS high and CAS low at the clock rising edge after minimum of tRCD delay. WE pin voltage level
defines whether the access cycle is a read operation ( WE high), or a write operation ( WE low). The
address inputs determine the starting column address. Reading or writing to a different row within an
activated bank requires the bank be precharged and a new Bank Activate command be issued. When
more than one bank is activated, interleaved bank Read or Write operations are possible. By using the
programmed burst length and alternating the access and precharge operations between multiple
banks, seamless data access operation among many different pages can be realized. Read or Write
Commands can also be issued to the same bank or between active banks on every clock cycle.
Publication Release Date: Mar. 22, 2010
- 7 - Revision A02

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W9816G6IH

512K x 2-BANKS x 16-BITS SDRAM

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