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Datasheet BZW04-33B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BZW04-33B | Transient Voltage Suppressor CREAT BY ART
Transient Voltage Suppressor
FEATURES
- Excellent clamping capability - Low impedance surge resistance - 400W surge capability at 10 / 1000 μs waveform - Very fast response time - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 200 |  Taiwan Semiconductor | tvs-diode |
| 2 | BZW04-33B | TRANSILTM ®
BZW04-5V8/376 BZW04-5V8B/376B
TRANSILTM
FEATURES PEAK PULSE POWER : 400 W (10/1000µs) STAND-OFF VOLTAGERANGE : From 5.8V to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. |  STMicroelectronics | data |
| 3 | BZW04-33B | TVS Diode, Rectifier www.vishay.com
BZW04-5V8 thru BZW04-376
Vishay General Semiconductor
TRANSZORB® Transient Voltage Suppressors
DO-204AL (DO-41)
FEATURES
• Glass passivated chip junction • Available in uni-directional and bi-directional • 400 W peak pulse power capability with a
10/1000 μs waveform, repet |  Vishay | tvs-diode |
BZW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BZW03 | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Glass passivated • High maximum operating t  NXP Semiconductors diode | | |
| 2 | BZW03-C10 | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Glass passivated • High maximum operating t NXP Semiconductors diode | | |
| 3 | BZW03-C100 | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Glass passivated • High maximum operating t NXP Semiconductors diode | | |
| 4 | BZW03-C11 | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Glass passivated • High maximum operating t NXP Semiconductors diode | | |
| 5 | BZW03-C110 | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Glass passivated • High maximum operating t NXP Semiconductors diode | | |
| 6 | BZW03-C12 | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Glass passivated • High maximum operating t NXP Semiconductors diode | | |
| 7 | BZW03-C120 | Voltage regulator diodes DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BZW03 series Voltage regulator diodes
Product specification Supersedes data of April 1992 1996 May 14
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES • Glass passivated • High maximum operating t NXP Semiconductors diode | |
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