Datasheet.kr   

VS-ST083S08 데이터시트 PDF




Vishay에서 제조한 전자 부품 VS-ST083S08은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 VS-ST083S08 자료 제공

부품번호 VS-ST083S08 기능
기능 Inverter Grade Thyristors
제조업체 Vishay
로고 Vishay 로고


VS-ST083S08 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 10 페이지수

미리보기를 사용할 수 없습니다

VS-ST083S08 데이터시트, 핀배열, 회로
www.vishay.com
VS-ST083SP Series
Vishay Semiconductors
Inverter Grade Thyristors (Stud Version), 85 A
TO-209AC (TO-94)
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
ITSM at 50 Hz
ITSM at 60 Hz
IGT
TC/Ths
TO-209AC (TO-94)
Single SCR
85 A
400 V to 1200 V
2.15 V
2450 A
2560 A
200 mA
85 °C
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
VALUES
85
85
135
2450
2560
30
27
400 to 1200
10 to 20
-40 to 125
UNITS
A
°C
A
A
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VS-ST083S
04
08
10
12
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
1000
1200
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
1100
1300
IDRM/IRRM MAX.
AT TJ = TJ MAX.
mA
30
Revision: 26-Mar-14
1 Document Number: 94334
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




VS-ST083S08 pdf, 반도체, 판매, 대치품
www.vishay.com
130
ST083S Series
RthJC (DC) = 0.195 K/W
120
110 Ø
Conduction angle
100
90
80
0
30° 60° 90° 120° 180°
10 20 30 40 50 60 70 80 90
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
VS-ST083SP Series
Vishay Semiconductors
130
ST083S Series
RthJC (DC) = 0.195 K/W
120
110
Ø
Conduction period
100
90
80
70
0
30°
60°
90°
120°
180°
DC
20 40 60 80 100 120 140
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
180
160
140
120
100
80
60
40
20
0
0
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
ST083S Series
TJ = 125 °C
10 20 30 40 50 60 70 80 90
Average On-State Current (A)
180
160
140
120
0.05.4K0K/W./3WK/W0.2 K/W
100
80 0.8 K/W
60 1.2 K/W
40
20
0
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
250
200
150
100
50
0
0
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
ST083S Series
TJ = 125 °C
250
R
200
0.2
thSA
K/W
=
0.1
K/W
150 00..450KK.3//WWK/W
- ΔR
100 0.8 K/W
1.2 K/W
50
20 40 60 80 100 120 140
Average On-State Current (A)
0
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 26-Mar-14
4 Document Number: 94334
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4페이지










VS-ST083S08 전자부품, 판매, 대치품
www.vishay.com
VS-ST083SP Series
Vishay Semiconductors
10 000
20 joules per pulse
1000
0.5 1 2
0.3
0.2
3
5 10
0.1
100
ST083S Series
Sinusoidal pulse
tp
10
10
100 1000
Pulse Basewidth (µs)
10 000
10 000
1000
100
ST083S Series
Rectangular pulse
tp dI/dt = 50 A/µs
20 joules
per pulse
4 7.5
2
1
0.5
0.3
0.2
0.1
10
10
100 1000
Pulse Basewidth (µs)
10 000
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr 1 µs
b) Recommended load line for
10
30 % rated dI/dt: 10 V, 10 Ω
tr 1 µs
(a)
(b)
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST083S Series
Frequency limited by PG(AV)
0.1 1 10
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
100
Revision: 26-Mar-14
7 Document Number: 94334
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

7페이지


구       성 총 10 페이지수
다운로드[ VS-ST083S08.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
VS-ST083S04

Inverter Grade Thyristors

Vishay
Vishay
VS-ST083S08

Inverter Grade Thyristors

Vishay
Vishay

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵