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부품번호 | VS-ST183C08CFN1 기능 |
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기능 | Inverter Grade Thyristors | ||
제조업체 | Vishay | ||
로고 | |||
전체 10 페이지수
www.vishay.com
VS-ST183C Series
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
TO-200AB (A-PUK)
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
ITSM at 50 Hz
ITSM at 60 Hz
IGT
TC/Ths
TO-200AB (A-PUK)
Single SCR
370 A
400 V, 800 V
1.80 V
4900 A
5130 A
200 mA
55 °C
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• International standard case TO-200AB (A-PUK)
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
Ths
Ths
50 Hz
60 Hz
50 Hz
60 Hz
Range
VALUES
370
55
690
25
4900
5130
120
110
400 to 800
10 to 20
-40 to 125
UNITS
A
°C
A
°C
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VS-ST183C..C
04
08
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
40
Revision: 17-Dec-13
1 Document Number: 94368
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-ST183C Series
Vishay Semiconductors
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
Single Side
Double Side
RECTANGULAR CONDUCTION
Single Side
Double Side
TEST CONDITIONS
UNITS
180°
0.015
0.016
0.011
0.011
120°
0.018
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
TJ = TJ maximum
K/W
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
130
120
110
100
90
80
70
60
50
40
0
ST183C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
Ø
Conduction angle
30° 60° 90°
180°
120°
40 80 120 160 200
Average On-State Current (A)
240
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
0
ST183C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
Ø
Conduction angle
30° 60° 90°
180°
120°
50 100 150 200 250 300 350 400 450
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0
ST183C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
Ø
Conduction period
30° 60° 90°
120° 180°
DC
50 100 150 200 250 300 350 400
Average On-State Current (A)
Fig. 2 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
0
ST183C..C Series
(Double side cooled)
RthJC (DC) = 0.08 K/W
Ø
Conduction period
90°
30° 60°
180°
120°
DC
100 200 300 400 500 600 700
Average On-State Current (A)
Fig. 4 - Current Ratings Characteristics
Revision: 17-Dec-13
4 Document Number: 94368
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
VS-ST183C Series
Vishay Semiconductors
10 000
1000
100
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
400 200 100
1000 500
1500
2500
3000
5000
10 000
10
10
ST183C..C Series
Trapezoidal pulse
tp
TC = 40 °C
dI/dt = 100 A/µs
100
1000
10 000
Pulse Basewidth (µs)
10 000
1000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
1000 500 400 200
1500
2500
100
3000
100 5000
10 000
10
10
ST183C..C Series
Trapezoidal pulse
tp
TC = 55 °C
dI/dt = 100 A/µs
100
1000
10 000
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
100 000
10 000
1000
20 joules per pulse
10
24
1
0.5
0.3
0.2
0.1
100
ST183C..C Series
Sinusoidal pulse
tp
10
10
100 1000
Pulse Basewidth (µs)
10 000
100 000
10 000
1000
100
ST183C..C Series
Rectangular pulse
tp dI/dt = 50 A/µs
2
1
0.3 0.5
0.2
0.1
20 joules per pulse
10
4
10
10
100 1000
Pulse Basewidth (µs)
10 000
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
10
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
(a)
(b)
(1) PGM = 10 W, tp = 20 ms
(2) PGM = 20 W, tp = 10 ms
(3) PGM = 40 W, tp = 5 ms
(4) PGM = 60 W, tp = 3.3 ms
1
0.1
0.001
VGD
IGD
0.01
(1) (2) (3) (4)
Device: ST183C..C Series
Frequency limited by PG(AV)
0.1 1
10
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
100
Revision: 17-Dec-13
7 Document Number: 94368
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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부품번호 | 상세설명 및 기능 | 제조사 |
VS-ST183C08CFN0 | Inverter Grade Thyristors | Vishay |
VS-ST183C08CFN1 | Inverter Grade Thyristors | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |