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VS-ST223C08CFN1 데이터시트 PDF




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기능 Inverter Grade Thyristors
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VS-ST223C08CFN1 데이터시트, 핀배열, 회로
www.vishay.com
VS-ST223C..C Series
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 390 A
TO-200AB (A-PUK)
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
ITSM at 50 Hz
ITSM at 60 Hz
IGT
TC/Ths
TO-200AB (A-PUK)
Single SCR
390 A
400 V, 800 V
1.58 V
5260 A
5510 A
200 mA
55 °C
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case TO-200AB (A-PUK)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
Ths
Ths
50 Hz
60 Hz
50 Hz
60 Hz
Range
VALUES
390
55
745
25
5850
6130
171
156
400 to 800
10 to 30
-40 to +125
UNITS
A
°C
A
°C
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VS-ST223C..C
04
08
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
40
Revision: 02-Jun-15
1 Document Number: 93672
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




VS-ST223C08CFN1 pdf, 반도체, 판매, 대치품
www.vishay.com
130
120
110
100
90
80
70
60
50
40
30
0
ST 223C ..C S eries
(Sin g le S id e C o o le d )
R thJ- hs (D C ) = 0.1 7 K / W
C o nd uc tio n A ng le
30°
6 0°
90°
120°
180°
50 100 150 200 250
Ave ra g e O n-sta te C urren t (A )
3 00
Fig. 1 - Current Ratings Characteristics
VS-ST223C..C Series
Vishay Semiconductors
1 30
1 20
1 10
1 00
90
80
70
60
50
40
30
20
0
ST 2 2 3 C ..C S e rie s
(D o uble Side C oole d)
RthJ-hs (D C ) = 0.08 K/W
C o ndu ction Pe rio d
30°
60°
90°
120°
180°
DC
100 200 300 400 500 600 700 800
A ve ra g e O n -sta te Curre nt (A )
Fig. 4 - Current Ratings Characteristics
13 0
12 0
11 0
10 0
90
80
70
60
50
40
30
20
0
ST 223 C ..C S eries
(Sin g le S id e C o o le d )
R t hJ- hs (D C ) = 0 .17 K / W
C o ndu ctio n Pe rio d
30 °
60°
90°
1 20°
180 °
DC
50 100 150 200 250 300 350 400 450
A vera g e O n-s ta te C urren t (A)
Fig. 2 - Current Ratings Characteristics
10 0 0
8 00
6 00
18 0°
12 0°
9 0°
6 0°
3 0°
RM S Lim it
4 00
2 00
0
0
C o nduc tio n A ng le
ST223C..C Series
TJ = 125°C
100 200 300 400
Average On -state Current (A)
500
Fig. 5 - On-State Power Loss Characteristics
1 30
1 20
1 10
1 00
90
80
70
60
50
40
30
20
0
S T 223C ..C S eries
(D o u b le S id e C o o le d )
R th J-hs (D C ) = 0 .08 K / W
C onduc tion An gle
30° 60° 90° 120°
180°
100 200 300 400
A ve ra g e O n-sta te C urren t (A)
5 00
Fig. 3 - Current Ratings Characteristics
1 4 00
1 2 00
1 0 00
80 0
DC
180°
120°
90°
60°
30°
RMS Limit
60 0
40 0 C o nd uc tio n Pe rio d
20 0
0
0
ST223C..C Series
TJ = 125°C
100 200 300 400 500 600 700 800
Average O n-state Curren t (A)
Fig. 6 - On-State Power Loss Characteristics
Revision: 02-Jun-15
4 Document Number: 93672
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-ST223C08CFN1 전자부품, 판매, 대치품
www.vishay.com
VS-ST223C..C Series
Vishay Semiconductors
1E 5
1E 4
1E 3
1E 2
tp
1E 1
1E1
2 0 jo ules per pulse
10
24
1
0.5
0 .3
0.2
0.1
ST223 C ..C Se ries
Sinuso id al p ulse
ST22 3C. .C Se ries
Re cta ngular pulse
tp di/d t = 5 0A/µs
20 jo ule s p er pulse
10
5
2
1
0.5
0.3
0.2
0 .1
1E2 1E3
P u lse B a sew idt h (µ s)
1E4
1E1 1E2 1E3
P u lse B ase w id t h (µ s)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
1E4
1 00
Re c t a n g ula r g a t e p u lse
a ) R e c o m m e n d e d lo a d lin e fo r
ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s
b ) Re c o m m e n d e d lo a d lin e f o r
< = 30% ra te d d i/d t : 10 V , 10o hm s
1 0 tr<=1 µs
(b)
(a)
(1) PGM = 10W, tp = 20m s
(2) PGM = 20W, tp = 10m s
(3) PGM = 40W, tp = 5m s
(4) PGM = 60W, tp = 3.3m s
1
0.1
0.0 01
VGD
IG D
0.0 1
(1) (2) (3 ) (4)
D e v ic e : ST 2 2 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V )
0.1 1
In sta n t a n e o u s G at e C u rr e n t (A )
10
1 00
Fig. 17 - Gate Characteristics
Revision: 02-Jun-15
7 Document Number: 93672
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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