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PDF BZX55B2V0 Data sheet ( Hoja de datos )
| Número de pieza | BZX55B2V0 | |
| Descripción | SILICON ZENER DIODES | |
| Fabricantes | EIC | |
| Logotipo |  |
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BZX55B2V0 ~ BZX55B100
VZ : 2.0 - 100 Volts
PD : 500 mW
SILICON ZENER DIODES
DO - 35
0.079(2.0 )max.
1.00 (25.4)
min.
FEATURES :
* Complete 2.0 to 100 Volts
* High surge current capability
0.150 (3.8)
max.
* High peak reverse power dissipation
* High reliability
* Low leakage current
0.020 (0.52)max.
1.00 (25.4)
min.
* Zener Voltage tolerance is ± 2%
* Pb / RoHS Free
MECHANICAL DATA
* Case : Molded glass
Dimensions in inches and ( millimeters )
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end. When operated in zener mode,
cathode will be positive with respect to anode
* Mounting position : Any
* Weight : 0.13 gram (approx.)
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
Power Dissipation (Note1)
Maximum Forward Voltage at IF =100 mA
Maximum Thermal Resistance Junction to Ambient Air (Note1)
Junction Temperature Range
Storage Temperature Range
Symbol
PD
VF
RθJA
Tj
Ts
Value
500
1.0
300
- 65 to + 200
- 65 to + 200
Note : (1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.
Unit
mW
V
°C/W
°C
°C
Page 1 of 2
Rev. 05 : June 25, 2005
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BZX55B2V0.PDF ] | |
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