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Número de pieza | TSM126 | |
Descripción | N-Channel Depletion-Mode MOSFET | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM126 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! TSM126
N-Channel Depletion-Mode MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)(max)
600 700 @ VGS = 0V
ID (A)
0.03
Features
● Depletion Mode
● Low Gate Charge
Application
● Converters
● Telecom
Ordering Information
Part No.
Package
Packing
TSM126CX RFG
SOT-23 3kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Tc=25℃
Continuous Drain Current
Pulsed Drain Current a
Tc=70℃
Maximum Power Dissipation
Soldering Temperature b
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
TL
TJ
TJ, TSTG
Thermal Performance
Parameter
Thermal Resistance, Junction to Ambient
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Distance of 1.6mm from case for 10 seconds.
Symbol
RӨJA
Limit
600
±20
0.030
0.024
0.120
0.5
300
+150
-55 to +150
Limit
250
Unit
V
V
A
A
A
W
oC
oC
oC
Unit
oC/W
1/7 Version: A14
1 page TSM126
N-Channel Depletion-Mode MOSFET
Electrical Characteristics Curves (Ta = 25oC, unless otherwise noted)
Maximum Peak Current Capability
5/7 Version: A14
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TSM126.PDF ] |
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