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PDF TSM160P02 Data sheet ( Hoja de datos )

Número de pieza TSM160P02
Descripción P-Channel Power MOSFET
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! TSM160P02 Hoja de datos, Descripción, Manual

TSM160P02
Taiwan Semiconductor
P-Channel Power MOSFET
-20V, -11A, 16mΩ
FEATURES
Improved dV/dt capability
Fast Switching
Suitable for 1.8V drive applications
Pb-free plating
RoHS compliant
Halogen-free mold compound
APPLICATION
Load Switch
Networking
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
VGS = -4.5V
RDS(on) (max) VGS = -2.5V
VGS = -1.8V
Qg
-20
16
22
28
27
V
mΩ
nC
SOP-8
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±10
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
ID
IDM
-11
-7
-44
Total Power Dissipation @ TC = 25°C
PDTOT
2.5
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
UNIT
V
V
A
A
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
25 °C/W
Junction to Ambient Thermal Resistance
RӨJA
50 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000161
1
Version: A15

1 page




TSM160P02 pdf
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
SOP-8
TSM160P02
Taiwan Semiconductor
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul V =Aug
W =Sep X =Oct Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000161
5
Version: A15

5 Page










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