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PDF TSM210N06 Data sheet ( Hoja de datos )
| Número de pieza | TSM210N06 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
TSM210N06
60V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
60 3.1 @ VGS =10V
ID (A)
210
Features
● Advanced Trench Technology
● Low RDS(ON) 3.1mΩ (Max.)
● Low gate charge typical @ 160nC (Typ.)
● Low Crss typical @ 300pF (Typ.)
Ordering Information
Part No.
TSM210N06CZ C0
Package
TO-220
Packing
50pcs / Tube
Block Diagram
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain Current
TC=70°C
TA=25°C
ID
TA=70°C
Drain Current-Pulsed Note 1
IDM
Avalanche Current, L=0.3mH
IAS, IAR
Avalanche Energy, L=0.3mH
EAS, EAR
TC=25°C
Maximum Power Dissipation
TC=70°C
TA=25°C
PD
TA=70°C
Storage Temperature Range
TSTG
Operating Junction Temperature Range
TJ
* Limited by maximum junction temperature
Limit
60
±20
210
170
19
15.2
650
113
1900
250
160
2
1.3
-55 to +150
-55 to +150
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJC
RӨJA
Limit
0.5
62.5
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
oC/W
oC/W
1/4 Version: A12
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TSM210N06.PDF ] | |
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