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Número de pieza | TSM250N02DCQ | |
Descripción | Dual N-Channel Power MOSFET | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM250N02DCQ (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! TSM250N02DCQ
20V Dual N-Channel MOSFET
TDFN 2x2
Pin Definition:
1. Source 1
2. Gate 1
3. Drain 2
6. Drain 1
5. Gate 2
4. Source 2
Key Parameter Performance
Parameter
Value
VDS
VGS = 4.5V
RDS(on) (max)
VGS = 2.5V
VGS = 1.8V
20
25
35
55
Qg 7.7
Unit
V
mΩ
nC
Features
Suitable for 1.8V drive applications
Low profile package
Block Diagram
Ordering Information
Part No.
Package
Packing
TSM250N02DCQ RFG TDFN 2x2 3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds
Dual N-Channel MOSFET
Absolute Maximum Ratings (TC=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Maximum Power Dissipation @ TC=25oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
TJ
TJ, TSTG
Thermal Performance
Parameter
Thermal Resistance Junction to Ambient
Symbol
RӨJA
Limit
20
±10
5.8
23.2
1
+150
- 55 to +150
Limit
80
Unit
V
V
A
A
W
°C
°C
Unit
°C/W
1/5 Version: A14
1 page TSM250N02DCQ
20V Dual N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5 Version: A14
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet TSM250N02DCQ.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM250N02DCQ | Dual N-Channel Power MOSFET | Taiwan Semiconductor |
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