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PDF TSM40N03PQ56 Data sheet ( Hoja de datos )
| Número de pieza | TSM40N03PQ56 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
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TSM40N03PQ56
30V N-Channel Power MOSFET
PDFN56
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
30 4.5 @ VGS =10V
5.8 @ VGS =4.5V
ID (A)
19
16
Features
● Advanced Trench Technology
● Low On-Resistance
● Low gate charge typical @ 12nC (Typ.)
● Low Crss typical @ 140pF (Typ.)
Ordering Information
Part No.
Package
Packing
TSM40N03PQ56 RLG PDFN56 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC=25°C
VGS
Continuous Drain Current
TC=70°C
TA=25°C
TA=70°C
ID
Drain Current-Pulsed Note 1
IDM
Avalanche Current, L=0.5mH
Avalanche Energy, L=0.5mH
IAS, IAR
EAS, EAR
Maximum Power Dissipation
Storage Temperature Range
TC=25°C
TC=70°C
TA=25°C
TA=70°C
PD
TSTG
Operating Junction Temperature Range
TJ
* Limited by maximum junction temperature
Limit
30
±20
40
40
31
25
100
38
72
36
23
4.2
2.7
-55 to +150
-55 to +150
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t ≤ 10sec
Symbol
RӨJC
RӨJA
Limit
3.5
30
Unit
V
V
A
A
A
mJ
W
°C
°C
Unit
oC/W
oC/W
1/4 Version: A12
1 page | ||
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| PDF Descargar | [ Datasheet TSM40N03PQ56.PDF ] | |
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