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PDF TSM4806 Data sheet ( Hoja de datos )
| Número de pieza | TSM4806 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TSM4806
20V N-Channel MOSFET
SOP-8
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
VDS
VGS = 4.5V
20
20
RDS(on) (max)
VGS = 2.5V
VGS = 1.8V
25
31
Qg 12.3
Unit
V
mΩ
nC
Features
● Advanced High Cell Density Trench Technology.
● Low Gate Charge.
Block Diagram
Application
● Networking DC-DC Power System.
● Load Switch.
Ordering Information
Part No.
Package
Packing
TSM4806CS RLG SOP-8 2.5kpcs / 13” Reel
Note: “G” denotes Halogen Free Product.
N-Channel MOSFET
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction)a,c
Total Power Dissipation
TA=25oC
Storage Temperature Range
Operating Junction Temperature Range
VDS
VGS
ID
IDM
IS
PD
TSTG
TJ
Limit
20
±8
28
70
28
2
-55 to +150
-55 to +150
Unit
V
V
A
A
A
W
oC
oC
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance Junction to Lead
Thermal Resistance Junction to Ambient
RӨJL
RӨJA
40
62.5
oC/W
oC/W
Notes:
a. The data tested by surface mounted on a 1 inch2 FR-4 board with 2oz copper.
b. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2% surface mounted on FR4 Board, t ≤ 5s.
c. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
1/6 Version: A14
1 page  
TSM4806
20V N-Channel MOSFET
SOP-8 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6 Version: A14
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM4806.PDF ] | |
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