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Número de pieza | TSM600N25E | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM600N25E (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! TSM600N25E
250V N-Channel Power MOSFET
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
VDS
RDS(on)(max)
Qg
250
0.6
8.4
Unit
V
Ω
nC
Features
● 100% avalanche tested
● Improved ESD performance
Ordering Information
Part No.
Package
Packing
TSM600N25ECH C5G TO-251
75pcs / Tube
TSM600N25ECP ROG TO-252 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation @ TC = 25oC
Peak Diode Recovery (Note 3)
Operating Junction Temperature
Storage Temperature Range
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Tc = 25ºC
Tc = 100ºC
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ
TSTG
Symbol
RӨJC
RӨJA
Block Diagram
N-Channel MOSFET
Limit
250
±30
8
3.6
32
147
8
5.2
52
4.5
150
-55 to +150
Limit
2.4
110
Unit
V
V
A
A
A
mJ
A
mJ
W
V/ns
ºC
oC
Unit
oC/W
1/7 Version: A14
1 page TSM600N25E
250V N-Channel Power MOSFET
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/7 Version: A14
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TSM600N25E.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM600N25E | N-Channel Power MOSFET / Transistor | Taiwan Semiconductor |
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