|
|
|
부품번호 | TSM60N1R4 기능 |
|
|
기능 | N-Channel Power MOSFET / Transistor | ||
제조업체 | Taiwan Semiconductor | ||
로고 | |||
전체 7 페이지수
TO-252
(DPAK)
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
TSM60N1R4
600V, 3.3A, 1.4Ω
N-Channel Power MOSFET
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
Qg
600
1.4
7.7
Unit
V
Ω
nC
Features
● Super-Junction technology
● High performance due to small figure-of-merit
● High ruggedness performance
● High commutation performance
Application
● Power Supply
● Lighting
Ordering Information
Part No.
Package
Packing
TSM60N1R4CH C5G TO-251
75pcs / Tube
TSM60N1R4CP ROG TO-252 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
RӨJC
RӨJA
Block Diagram
N-Channel MOSFET
Limit
600
±30
3.3
9.9
38
64
1.6
- 55 to +150
Limit
3.3
62
Unit
V
V
A
A
W
mJ
A
°C
Unit
°C/W
°C/W
1/7 Version: A14
Electrical Characteristics Curves
Capacitance vs. Drain-Source Voltage
TSM60N1R4
600V, 3.3A, 1.4Ω
N-Channel Power MOSFET
BVDSS vs. Junction Temperature
Maximum Safe Operating Area (DPAK/IPAK)
Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK)
101
100
10-1
10-2
10-3
10-4
10-7
10-6
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-5 10-4
10-3 10-2
10-1 100
Square Wave Pulse Duration (sec)
101
4/7 Version: A14
4페이지 TSM60N1R4
600V, 3.3A, 1.4Ω
N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
7/7 Version: A14
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ TSM60N1R4.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TSM60N1R4 | N-Channel Power MOSFET / Transistor | Taiwan Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |