|
|
PDF TSM60N600 Data sheet ( Hoja de datos )
| Número de pieza | TSM60N600 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TSM60N600 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
ITO-220
TO-252
(DPAK)
TSM60N600
600V, 8A, 0.6Ω
N-Channel Power MOSFET
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
VDS 600
RDS(on) (max)
Qg
0.6
13
Unit
V
Ω
nC
Features
● Super-Junction technology
● High performance due to small figure-of-merit
● High ruggedness performance
● High commutation performance
Application
● Power Supply.
● Lighting
Ordering Information
Part No.
Package
Packing
TSM60N600CI C0G
ITO-220
50pcs / Tube
TSM60N600CH C5G TO-251
75pcs / Tube
TSM60N600CP ROG TO-252 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation @ TC=25oC
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
TC = 25oC
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
Block Diagram
N-Channel MOSFET
Limit
ITO-220 IPAK/DPAK
600
±30
8
24
32 83
100
2
- 55 to +150
Unit
V
V
A
A
W
mJ
A
oC
1/9 Version: A14
1 page  
TSM60N600
600V, 8A, 0.6Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK)
101
100
10-1
Duty=0.5
Duty=0.2
10-2 Duty=0.1
Duty=0.05
Duty=0.02
10-3 Duty=0.01
Single pulse
10-4
10-7 10-6 10-5 10-4 10-3 10-2 10-1 100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220)
100
100
10-1
Duty=0.5
Duty=0.2
10-2 Duty=0.1
Duty=0.05
Duty=0.02
10-3 Duty=0.01
Single pulse
10-4
10-7 10-6 10-5 10-4 10-3 10-2 10-1 100
Square Wave Pulse Duration (s)
101
101
5/9 Version: A14
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TSM60N600.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TSM60N600 | N-Channel Power MOSFET / Transistor | Taiwan Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |