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PDF TSM60N750 Data sheet ( Hoja de datos )
| Número de pieza | TSM60N750 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TO-252
(DPAK)
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
TSM60N750
600V, 6A, 0.75Ω
N-Channel Power MOSFET
Key Parameter Performance
Parameter
Value
VDS 600
RDS(on) (max)
Qg
0.75
10.8
Unit
V
Ω
nC
Features
● Super-Junction technology
● High performance due to small figure-of-merit
● High ruggedness performance
● High commutation performance
Application
● Power Supply.
● Lighting
Ordering Information
Part No.
Package
Packing
TSM60N750CH C5G TO-251
75pcs / Tube
TSM60N750CP ROG TO-252 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation @ TC=25oC
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
TC = 25oC
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
Block Diagram
N-Channel MOSFET
Limit
IPAK/DPAK
600
±30
6
18
62.5
90
1.9
- 55 to +150
Unit
V
V
A
A
W
mJ
A
oC
1/7 Version: A14
1 page  
TSM60N750
600V, 6A, 0.75Ω
N-Channel Power MOSFET
TO-251 (IPAK) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/7 Version: A14
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TSM60N750.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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