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부품번호 | TSM680P06D 기능 |
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기능 | Dual P-Channel Power MOSFET | ||
제조업체 | Taiwan Semiconductor | ||
로고 | |||
전체 6 페이지수
TSM680P06D
Taiwan Semiconductor
Dual P-Channel MOSFET
-60V, -12A, 68mΩ
FEATURES
● Fast switching
● Low thermal resistance package
● Low profile package
● Pb-free plating
● RoHS compliant
● Halogen-free package
APPLICATION
● Power Supply
● Motor control
PDFN56 Dual
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = -10V
VGS = -4.5V
Qg
-60
68
110
16.4
V
mΩ
nC
Notes: Moisture sensitivity level: level 3. Per J-STD-020
Dual P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
-60
±20
-12
-8
-48
3.5
7.2
12
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
4.5 °C/W
Junction to Ambient Thermal Resistance
RӨJA
85 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
Document Number:DS_P0000162
1
Version: A15
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Continuous Drain Current vs. TC
TSM680P06D
Taiwan Semiconductor
Normalized RDS(ON) vs. TJ
TC , Case Temperature (℃)
Normalized Vth vs. TJ
TJ , Junction Temperature (℃)
Gate Charge Waveform
TJ , Junction Temperature (℃)
Normalized Transient Impedance
Qg , Gate Charge (nC)
Maximum Safe Operation Area
Square Wave Pulse Duration
(s)
Document Number:DS_P0000162
-VDS , Drain to Source Voltage (V)
4 Version: A15
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ TSM680P06D.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TSM680P06 | P-Channel Power MOSFET | Taiwan Semiconductor |
TSM680P06D | Dual P-Channel Power MOSFET | Taiwan Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |