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Número de pieza | TSM70N1R4 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM70N1R4 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! 7 TSM70N1R4
Taiwan Semiconductor
N-Channel Power MOSFET
700V, 3.3A, 1.4Ω
FEATURES
● Super-Junction technology
● High performance due to small figure-of-merit
● High ruggedness performance
● High commutation performance
APPLICATION
● Power Supply
● Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
RDS(on) (max)
Qg
700 V
1.4 Ω
7.7 nC
TO-251 (IPAK) TO-252 (DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
700
±30
3.3
2.0
9.9
38
64
1.6
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
3.3 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000136
1
Version: B15
1 page 7
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
TSM70N1R4
Taiwan Semiconductor
BVDSS vs. Junction Temperature
Maximum Safe Operating Area
101
100
10-1
10-2
10-3
10-4
10-7
10-6
Normalized Thermal Transient Impedance
10-5 10-4
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-3 10-2 10-1 100 101
Square Wave Pulse Duration (sec)
Document Number: DS_P0000136
5
Version: B15
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet TSM70N1R4.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM70N1R4 | N-Channel Power MOSFET / Transistor | Taiwan Semiconductor |
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