DataSheet.es    


PDF TSM70N600 Data sheet ( Hoja de datos )

Número de pieza TSM70N600
Descripción N-Channel Power MOSFET / Transistor
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de TSM70N600 (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! TSM70N600 Hoja de datos, Descripción, Manual

TSM70N600
Taiwan Semiconductor
N-Channel Power MOSFET
700V, 8A, 0.6
FEATURES
Super-Junction technology
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
APPLICATION
Power Supply
Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
RDS(on) (max)
Qg
700 V
0.6
12.6 nC
ITO-220
TO-251 (IPAK)
TO-252 (DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL ITO-220
IPAK/DPAK
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
700
±30
8
4.8
24
32 83
100
2
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL ITO-220 IPAK/DPAK UNIT
Junction to Case Thermal Resistance
RӨJC
3.9
1.5 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000138
1
Version: C15

1 page




TSM70N600 pdf
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
TSM70N600
Taiwan Semiconductor
BVDSS vs. Junction Temperature
Maximum Safe Operating Area (DPAK/IPAK)
Maximum Safe Operating Area (ITO-220)
100
100
10-1
10-2
10-3
10-4
10-7
Normalized Thermal Transient Impedance (ITO-220)
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-6 10-5 10-4 10-3 10-2 10-1 100
Square Wave Pulse Duration (s)
101
Document Number: DS_P0000138
5
Version: C15

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet TSM70N600.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
TSM70N600N-Channel Power MOSFET / TransistorTaiwan Semiconductor
Taiwan Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar