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PDF TSM900N06 Data sheet ( Hoja de datos )
| Número de pieza | TSM900N06 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TSM900N06 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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TO-251S
(IPAK SL)
SOT-223
TSM900N06
60V N-Channel Power MOSFET
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
VDS
RDS(on) (max)
VGS = 10V
VGS = 4.5V
60
90
100
Qg 9.3
Unit
V
mΩ
nC
Ordering Information
Part No.
Package
Packing
TSM900N06CH X0G TO-251S
75pcs / Tube
TSM900N06CP ROG TO-252 2.5kpcs / 13” Reel
TSM900N06CW RPG SOT-223 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Tc=25°C
Tc=100°C
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Energy (Note 3)
Single Pulse Avalanche Current (Note 3)
Total Power
@ TC=25°C
Dissipation
Derate above TC=25°C
Operating Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
EAS
IAS
PD
TJ
TSTG
IPAK
25
0.2
N-Channel MOSFET
Limit
DPAK
60
±20
11
7
44
25
7
25
0.2
150
-55 to +150
SOT-223
1.79
0.014
Unit
V
V
A
A
A
mJ
A
W
W/°C
°C
°C
1/8 Version: B14
1 page  
TSM900N06
60V N-Channel Power MOSFET
TO-251S Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/8 Version: B14
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TSM900N06.PDF ] | |
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