|
|
Número de pieza | TSM900N10 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM900N10 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! TSM900N10
Taiwan Semiconductor
N-Channel Power MOSFET
100V, 15A, 90mΩ
FEATURES
● 100% avalanche tested
● Low gate charge for fast switching
● Pb-free plating
● RoHS compliant
● Halogen-free mold compound
APPLICATION
● Networking
● Load Switching
● LED Lighting Control
● AC-DC Secondary Rectification
TO-251S
(IPAK SL)
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = 10V
VGS = 4.5V
Qg
100
90
100
9.3
V
mΩ
nC
TO-252
(DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
100
±20
15
9.5
60
50
18
6
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
2.5 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000173
1
Version: A15
1 page PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-251S (IPAK SL)
TSM900N10
Taiwan Semiconductor
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
` S =May T =Jun U =Jul V =Aug
W =Sep X =Oct Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000173
5
Version: A15
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet TSM900N10.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM900N10 | N-Channel Power MOSFET / Transistor | Taiwan Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |