|
|
|
부품번호 | DXT3150 기능 |
|
|
기능 | NPN SURFACE MOUNT TRANSISTOR | ||
제조업체 | Diodes | ||
로고 | |||
전체 3 페이지수
DXT3150
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
SOT89-3L
COLLECTOR
3 E 2,4
C4 2 C
1B
TOP VIEW
1
BASE
3
EMITTER
Schematic and Pin Configuration
Symbol
VCBO
VCEO
VEBO
IC
Value
50
25
7
5
Unit
V
V
V
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
Tj, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
Symbol
V(BR)CEO
ICBO
IEBO
Min
25
⎯
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
VBE(SAT)
hFE
⎯
250
150
50
fT
Cobo
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
220
⎯
Max
⎯
1.0
1.0
0.35
0.50
1.10
1.40
550
⎯
⎯
⎯
50
Unit Test Conditions
V IC = 10mA, IB = 0
μA VCB = 50V, IE = 0
μA VEB = 7.0V, IC = 0
V IC = 3.0A, IB = 150mA
IC = 4.0A, IB = 200mA
V IC = 3.0A, IB = 150mA
IC = 4.0A, IB = 200mA
IC = 500mA, VCE = 2.0V
⎯ IC = 2.0A, VCE = 2.0V
IC = 5.0A, VCE = 2.0V
MHz IC = 50mA, VCE = 6.0V,
f = 100MHz
pF VCB = 10V, IE = 0, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31157 Rev. 3 - 2
1 of 3
www.diodes.com
DXT3150
© Diodes Incorporated
| |||
구 성 | 총 3 페이지수 | ||
다운로드 | [ DXT3150.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DXT3150 | NPN SURFACE MOUNT TRANSISTOR | Diodes |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |